列印頁面
IRFIB6N60APBF
Power MOSFET, N Channel, 600 V, 5.5 A, 0.75 ohm, TO-220FP, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
936 有存貨
需要更多？
936 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$138.720 |
| 10+ | NT$88.290 |
| 100+ | NT$76.320 |
| 500+ | NT$65.650 |
| 1000+ | NT$60.800 |
價格Each
最少: 1
多項: 1
NT$138.72
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFIB6N60APBF复制
製造商標準前置時間52 週
訂購代碼8649073
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id5.5A
Drain Source On State Resistance0.75ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
產品總覽
The IRFIB6N60APBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- High voltage isolation
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5.5A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.75ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002