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IRFL110PBF
Power MOSFET, N Channel, 100 V, 1.5 A, 0.54 ohm, SOT-223, Surface Mount
不再生產
產品訊息
製造商VISHAY
製造商產品編號IRFL110PBF复制
訂購代碼8649162
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.5A
Drain Source On State Resistance0.54ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation3.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
IRFL110PBF 的替代選擇
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產品總覽
The IRFL110PBF is a 100V N-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The SOT-223 package is designed for surface-mount using vapour phase, infra-red or wave soldering techniques. Its unique package design allows for easy automatic pick-and place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 150°C Operating temperature
- Easy to parallel
- Simple drive requirement
- Fast switching
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1.5A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
3.1W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.0002