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| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$31.530 | NT$157.65 |
| 總計 價格 | NT$157.65 | ||
| 數量 | 價格 |
|---|---|
| 5+ | NT$31.530 |
| 50+ | NT$29.410 |
| 100+ | NT$27.280 |
| 500+ | NT$25.150 |
| 1000+ | NT$24.160 |
產品訊息
產品總覽
The IRFL110TRPBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
N Channel
1.5A
SOT-223
10V
2W
150°C
-
Lead (04-Feb-2026)
100V
0.54ohm
Surface Mount
-
3Pins
-
-
IRFL110TRPBF 的替代選擇
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法規與環境保護
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
