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IRFPE50PBF
Power MOSFET, N Channel, 800 V, 7.8 A, 1.2 ohm, TO-247AC, Through Hole
1,433 有存貨
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1,433 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$183.710 |
| 10+ | NT$117.870 |
| 100+ | NT$98.620 |
| 500+ | NT$85.110 |
| 1000+ | NT$83.080 |
價格Each
最少: 1
多項: 1
NT$183.71
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFPE50PBF复制
製造商標準前置時間64 週
訂購代碼1653671
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id7.8A
Drain Source On State Resistance1.2ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
產品總覽
Third generation Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dV/dot rating
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
- Ease of Paralleling
- Simple drive requirements
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
7.8A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
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產品合規憑證
重量 (公斤)：.006237