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IRFPF50PBF
Power MOSFET, N Channel, 900 V, 6.7 A, 1.6 ohm, TO-247AC, Through Hole
1,742 有存貨
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1,742 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$294.250 |
| 10+ | NT$173.380 |
| 100+ | NT$155.260 |
| 500+ | NT$134.480 |
| 1000+ | NT$131.800 |
價格Each
最少: 1
多項: 1
NT$294.25
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFPF50PBF复制
製造商標準前置時間52 週
訂購代碼8649553
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id6.7A
Drain Source On State Resistance1.6ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
產品總覽
The IRFPF50PBF is a 900V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Easy to parallel
- Simple drive requirement
- Isolated central mounting hole
- Fast switching
- 175°C Operating temperature
應用
Power Management, Commercial, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
6.7A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
900V
Drain Source On State Resistance
1.6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
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產品合規憑證
重量 (公斤)：.006