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IRFRC20PBF
Power MOSFET, N Channel, 600 V, 2 A, 4.4 ohm, TO-252 (DPAK), Surface Mount
1,674 有存貨
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1,674 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$61.950 |
| 10+ | NT$28.990 |
| 100+ | NT$22.730 |
| 500+ | NT$19.820 |
| 1000+ | NT$18.000 |
| 5000+ | NT$15.940 |
價格Each
最少: 1
多項: 1
NT$61.95
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFRC20PBF复制
製造商標準前置時間24 週
訂購代碼8649936
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id2A
Drain Source On State Resistance4.4ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation42W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
產品總覽
The IRFRC20PBF is a 600V N-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Easy to parallel
- Fast switching
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
42W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
4.4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
IRFRC20PBF 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
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產品合規憑證
重量 (公斤)：.000647