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IRFU120PBF
Power MOSFET, N Channel, 100 V, 7.7 A, 0.27 ohm, TO-251AA, Through Hole
984 有存貨
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984 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$63.150 |
| 10+ | NT$34.120 |
| 100+ | NT$25.940 |
| 500+ | NT$21.360 |
| 1000+ | NT$20.270 |
| 5000+ | NT$19.870 |
價格Each
最少: 1
多項: 1
NT$63.15
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFU120PBF复制
製造商標準前置時間28 週
訂購代碼8658919
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id7.7A
Drain Source On State Resistance0.27ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation42W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
產品總覽
The IRFU120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
- Dynamic dV/dt rating
- Ease of paralleling
- Straight lead
- Repetitive avalanche rated
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
7.7A
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
42W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0004