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IRFZ34PBF
Power MOSFET, N Channel, 60 V, 30 A, 0.05 ohm, TO-220AB, Through Hole
280 有存貨
需要更多？
280 件可于 3-4 個工作日後配送(英國 件庫存)
存貨供應完畢便停止銷售
| 數量 | 價格 |
|---|---|
| 1+ | NT$80.040 |
| 10+ | NT$51.000 |
| 100+ | NT$34.790 |
| 500+ | NT$29.080 |
| 1000+ | NT$23.720 |
| 5000+ | NT$22.910 |
價格Each
最少: 1
多項: 1
NT$80.04
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRFZ34PBF复制
製造商標準前置時間17 週
訂購代碼2547307
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id30A
Drain Source On State Resistance0.05ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation88W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (19-Jan-2021)
IRFZ34PBF 的替代選擇
找到 8 個產品
產品總覽
The IRFZ34PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- -55 to 175°C Operating temperature range
- Ease of paralleling
- Simple drive requirements
應用
Industrial, Power Management, Commercial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
88W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 7 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (19-Jan-2021)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002