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IRL510PBF
Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole
1,720 有存貨
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1,720 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$64.830 |
| 10+ | NT$43.450 |
| 100+ | NT$32.660 |
| 500+ | NT$25.900 |
| 1000+ | NT$20.990 |
| 5000+ | NT$19.770 |
價格Each
最少: 1
多項: 1
NT$64.83
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號IRL510PBF复制
製造商標準前置時間28 週
訂購代碼9102779
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5.6A
Drain Source On State Resistance0.54ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (04-Feb-2026)
產品總覽
Third generation power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dV/dot rating
- Repetitive avalanche rated
- Logic-level gate drive
- 175°C operating temperature
- Fast switching
- Ease of paralleling
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5.6A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
5V
Power Dissipation
43W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
IRL510PBF 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002