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IRLD120PBF
Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, DIP, Through Hole
不再生產
產品訊息
製造商VISHAY
製造商產品編號IRLD120PBF复制
訂購代碼9102531
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.3A
Drain Source On State Resistance0.27ohm
Transistor Case StyleDIP
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (10-Jun-2022)
IRLD120PBF 的替代選擇
找到 1 個產品
產品總覽
The IRLD120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
- Dynamic dV/dt rating
- For automatic insertion
- Repetitive avalanche rated
- End stackable
- Logic-level gate drive
- RDS (ON) Specified at VGS = 4 and 5V
- -55 to 175°C Operating temperature range
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
1.3A
Transistor Case Style
DIP
Rds(on) Test Voltage
5V
Power Dissipation
1.3W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (10-Jun-2022)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (10-Jun-2022)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000599