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SI1022R-T1-GE3
Power MOSFET, N Channel, 60 V, 330 mA, 1.25 ohm, SC-75A, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SI1022R-T1-GE3复制
訂購代碼
複捲式2098044RL
條帶式包裝2098044
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id330mA
Drain Source On State Resistance1.25ohm
Transistor Case StyleSC-75A
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation250mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The SI1022R-T1-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.
- 2000V Gate-source ESD protected
- Low ON-resistance
- Low threshold
- 25ns Fast switching speed
- 30pF Low input capacitance
- Low input and output leakage
- Miniature package
- Halogen-free
- Low offset voltage
- Low-voltage operation
- High-speed circuits
- Low error voltage
- Small board area
應用
Industrial, Power Management, Portable Devices
技術規格
Channel Type
N Channel
Continuous Drain Current Id
330mA
Transistor Case Style
SC-75A
Rds(on) Test Voltage
10V
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
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產品合規憑證
重量 (公斤)：.009