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SI1539CDL-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 700 mA, 700 mA, 0.323 ohm
產品訊息
製造商VISHAY
製造商產品編號SI1539CDL-T1-GE3
訂購代碼2056712
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel700mA
Drain Source On State Resistance N Channel0.323ohm
Drain Source On State Resistance P Channel0.323ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel340mW
Power Dissipation P Channel340mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SI1539CDL-T1-GE3 is a N/P-channel MOSFET designed for use with DC to DC converter and load switch applications.
- Halogen-free
- 100% Rg tested
應用
Industrial, Power Management
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
700mA
Drain Source On State Resistance P Channel
0.323ohm
No. of Pins
6Pins
Power Dissipation P Channel
340mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
700mA
Drain Source On State Resistance N Channel
0.323ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
340mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
SI1539CDL-T1-GE3 的替代選擇
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原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000005