列印頁面
SI2323DS-T1-E3
Power MOSFET, P Channel, 20 V, 4.7 A, 0.039 ohm, TO-236, Surface Mount
不再生產
產品訊息
製造商VISHAY
製造商產品編號SI2323DS-T1-E3复制
訂購代碼1470106
Product RangeTrenchFET Series
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.7A
Drain Source On State Resistance0.039ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
4.7A
Transistor Case Style
TO-236
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.039ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
TrenchFET Series
MSL
-
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0001