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SI4128DY-T1-GE3
Power MOSFET, N Channel, 30 V, 10.9 A, 0.024 ohm, SOIC, Surface Mount
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188 有存貨
5,000 即日起您可預購補貨
188 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$41.010 |
| 10+ | NT$25.530 |
| 100+ | NT$16.640 |
| 500+ | NT$12.840 |
| 1000+ | NT$10.280 |
| 5000+ | NT$9.020 |
價格Each
最少: 1
多項: 1
NT$41.01
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4128DY-T1-GE3复制
製造商標準前置時間56 週
訂購代碼1779237
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id10.9A
Drain Source On State Resistance0.024ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The SI4128DY-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch and system power applications.
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
10.9A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
SI4128DY-T1-GE3 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005