列印頁面
SI4431BDY-T1-E3
Power MOSFET, P Channel, 30 V, 5.8 A, 0.03 ohm, SOIC, Surface Mount
可供訂購
製造商標準交貨時間：17 週
有貨時通知我
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$41.770 | NT$41.77 |
| 總計 價格 | NT$41.77 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$41.770 |
| 10+ | NT$28.780 |
| 100+ | NT$24.260 |
| 500+ | NT$20.160 |
| 1000+ | NT$18.060 |
| 5000+ | NT$17.130 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4431BDY-T1-E3复制
製造商標準前置時間17 週
訂購代碼
複捲式1612646RL
條帶式包裝1612646
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.8A
Drain Source On State Resistance0.03ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The SI4431BDY-T1-E3 is a -30V P-channel TrenchFET® Power MOSFET with advance high density process. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
應用
Power Management, Consumer Electronics
技術規格
Channel Type
P Channel
Continuous Drain Current Id
5.8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
SI4431BDY-T1-E3 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000225