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SI4435FDY-T1-GE3
Power MOSFET, P Channel, 30 V, 12.6 A, 0.019 ohm, SOIC, Surface Mount
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製造商VISHAY
製造商產品編號SI4435FDY-T1-GE3复制
製造商標準前置時間56 週
訂購代碼
複捲式3470708RL
條帶式包裝3470708
Product RangeTrenchFET III
您的零件号
45,905 有存貨
需要更多？
45,905 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$16.350 | NT$81.75 |
| 總計 價格 | NT$81.75 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$16.350 |
| 50+ | NT$13.450 |
| 100+ | NT$10.550 |
| 500+ | NT$8.040 |
| 1000+ | NT$7.230 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4435FDY-T1-GE3复制
製造商標準前置時間56 週
訂購代碼
複捲式3470708RL
條帶式包裝3470708
Product RangeTrenchFET III
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12.6A
Drain Source On State Resistance0.019ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation4.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET III
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
SI4435FDY-T1-GE3 is a P-channel 30V (D-S) MOSFET. Typical applications include adapter switch, load switch, DC/DC converters, high speed switching, power management in battery-operated, mobile and wearable devices.
- TrenchFET® Gen III p-channel power MOSFET
- 100% Rg tested
- Drain-source breakdown voltage is -30V min at VGS = 0V, ID = -250μA, TJ = 25°C
- Gate-source leakage is ±100nA max at VDS = 0V, VGS = ±20V, TJ = 25°C
- Drain-source on-state resistance is 0.015ohm typ at VGS = -10V, ID = -9A, TJ = 25°C
- Total gate charge is 28nC typ at VDS = -15V, VGS = -10V, ID = -5A, TJ = 25°C
- Continuous source-drain diode current is -4A max ta TC = 25°C
- Body diode reverse recovery time is 20ns typ at IF = -5A, dI/dt = 100A/μs, TJ = 25°C
- SO-8 package
- Operating junction and storage temperature range from -55 to +150°C
技術規格
Channel Type
P Channel
Continuous Drain Current Id
12.6A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
4.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.019ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET III
SVHC
No SVHC (04-Feb-2026)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000129