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SI4559ADY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 5.3 A, 5.3 A, 0.046 ohm
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| 數量 | 價格 |
|---|---|
| 5+ | NT$49.040 |
| 50+ | NT$41.300 |
| 100+ | NT$33.550 |
| 500+ | NT$27.810 |
| 1000+ | NT$26.680 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$245.20
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4559ADY-T1-GE3
訂購代碼3772758
Product RangeTrench Series
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel5.3A
Drain Source On State Resistance N Channel0.046ohm
Drain Source On State Resistance P Channel0.046ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product RangeTrench Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
5.3A
Drain Source On State Resistance P Channel
0.046ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
Trench Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.046ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000383