列印頁面
SI4590DY-T1-GE3
Dual MOSFET, N and P Channel, 100 V, 100 V, 5.6 A, 5.6 A, 0.047 ohm
不再生產
產品訊息
製造商VISHAY
製造商產品編號SI4590DY-T1-GE3复制
訂購代碼3772759
Product RangeTrenchFET Series
技術資料表
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id N Channel5.6A
Continuous Drain Current Id P Channel5.6A
Drain Source On State Resistance N Channel0.047ohm
Drain Source On State Resistance P Channel0.047ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.6W
Power Dissipation P Channel3.6W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCLead (07-Nov-2024)
技術規格
Channel Type
N and P Channel
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id P Channel
5.6A
Drain Source On State Resistance P Channel
0.047ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.6W
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id N Channel
5.6A
Drain Source On State Resistance N Channel
0.047ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001