列印頁面
SI4840BDY-T1-GE3
Power MOSFET, N Channel, 40 V, 19 A, 9000 µohm, NSOIC, Surface Mount
973 有存貨
需要更多？
973 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$76.320 | NT$76.32 |
| 總計 價格 | NT$76.32 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$76.320 |
| 10+ | NT$36.990 |
| 100+ | NT$33.170 |
| 500+ | NT$26.450 |
| 1000+ | NT$25.930 |
| 5000+ | NT$25.400 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4840BDY-T1-GE3复制
製造商標準前置時間4 週
訂購代碼
複捲式2454807RL
條帶式包裝2454807
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id19A
Drain Source On State Resistance9000µohm
Transistor Case StyleNSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation6W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
產品總覽
The SI4840BDY-T1-GE3 is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification, POL and IBC applications.
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
19A
Transistor Case Style
NSOIC
Rds(on) Test Voltage
10V
Power Dissipation
6W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
SI4840BDY-T1-GE3 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00033