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SI4936CDY-T1-GE3
Dual MOSFET, N Channel, 30 V, 5.8 A, 0.033 ohm
3,461 有存貨
15,000 即日起您可預購補貨
3,461 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$25.530 | NT$127.65 |
| 總計 價格 | NT$127.65 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$25.530 |
| 50+ | NT$18.840 |
| 100+ | NT$16.670 |
| 500+ | NT$12.840 |
| 1000+ | NT$12.590 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4936CDY-T1-GE3复制
製造商標準前置時間49 週
訂購代碼
複捲式1779274RL
條帶式包裝1779274
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel5.8A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.3W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The SI4936CDY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for low current DC-to-DC conversion and notebook system power applications.
- Halogen-free
- TrenchFET® power MOSFET
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
5.8A
Drain Source On State Resistance N Channel
0.033ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000154