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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$39.670 | NT$198.35 |
| 總計 價格 | NT$198.35 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$39.670 |
| 50+ | NT$33.380 |
| 100+ | NT$27.080 |
| 500+ | NT$22.620 |
| 1000+ | NT$19.330 |
整卷
| 數量 | 價格 |
|---|---|
| 2500+ | NT$15.480 |
| 7500+ | NT$15.180 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4946CDY-T1-GE3复制
製造商標準前置時間56 週
訂購代碼
整卷4320237
複捲式2846626RL
條帶式包裝2846626
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel6.1A
Continuous Drain Current Id P Channel6.1A
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel0.033ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.8W
Power Dissipation P Channel2.8W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
Dual N-channel 60V (D-S) MOSFET suitable for use in DC/DC converter, load switch, inverters and circuit protection applications.
- TrenchFET® power MOSFET
- 100% Rg tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
6.1A
Drain Source On State Resistance P Channel
0.033ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.8W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
6.1A
Drain Source On State Resistance N Channel
0.033ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Germany
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤):.00016
