列印頁面
SI6562CDQ-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 6.7 A, 6.7 A, 0.18 ohm
圖片僅供舉例說明。 請參閱產品描述。
1,765 有存貨
9,000 即日起您可預購補貨
1,765 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$63.620 |
| 10+ | NT$40.240 |
| 100+ | NT$26.790 |
| 500+ | NT$21.040 |
| 1000+ | NT$20.720 |
| 5000+ | NT$20.400 |
價格Each
最少: 1
多項: 1
NT$63.62
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI6562CDQ-T1-GE3复制
製造商標準前置時間56 週
訂購代碼2335341
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel6.7A
Continuous Drain Current Id P Channel6.7A
Drain Source On State Resistance N Channel0.18ohm
Drain Source On State Resistance P Channel0.18ohm
Transistor Case StyleTSSOP
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The SI6562CDQ-T1-GE3 is a N/P-channel MOSFET housed in a surface-mount package. It is suitable for load switch and DC-to-DC converter applications.
- TrenchFET® power MOSFET
應用
Industrial, Power Management
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
6.7A
Drain Source On State Resistance P Channel
0.18ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.6W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
6.7A
Drain Source On State Resistance N Channel
0.18ohm
Transistor Case Style
TSSOP
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000092