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12,075 有存貨
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12,075 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$66.620 | NT$333.10 |
| 總計 價格 | NT$333.10 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$66.620 |
| 50+ | NT$56.280 |
| 100+ | NT$45.930 |
| 500+ | NT$35.900 |
| 1500+ | NT$35.190 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI7898DP-T1-GE3复制
製造商標準前置時間56 週
訂購代碼
複捲式1794797RL
條帶式包裝1794797
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id3A
Drain Source On State Resistance0.085ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The SI7898DP-T1-GE3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC power supply primary side switch and industrial motor driver applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- PWM optimized
- Fast switching
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
應用
Industrial, Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
SI7898DP-T1-GE3 的替代選擇
找到 1 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Israel
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000145

