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SI7994DP-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 60 A, 60 A, 4600 µohm
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4,225 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$140.330 |
| 10+ | NT$95.120 |
| 100+ | NT$68.300 |
| 500+ | NT$63.630 |
| 1000+ | NT$62.070 |
價格Each
最少: 1
多項: 1
NT$140.33
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI7994DP-T1-GE3复制
製造商標準前置時間56 週
訂購代碼2335381
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel60A
Continuous Drain Current Id P Channel60A
Drain Source On State Resistance N Channel4600µohm
Drain Source On State Resistance P Channel4600µohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.5W
Power Dissipation P Channel3.5W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
產品總覽
The SI7994DP-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for system power DC-to-DC conversion, notebook and server applications.
- Halogen-free
- TrenchFET® power MOSFET
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
60A
Drain Source On State Resistance P Channel
4600µohm
No. of Pins
8Pins
Power Dissipation P Channel
3.5W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
60A
Drain Source On State Resistance N Channel
4600µohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001