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SI9926CDY-T1-GE3
Dual MOSFET, N Channel, 20 V, 20 V, 8 A, 8 A, 0.015 ohm
1,762 有存貨
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1,762 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$42.890 | NT$214.45 |
| 總計 價格 | NT$214.45 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$42.890 |
| 50+ | NT$35.790 |
| 100+ | NT$28.680 |
| 500+ | NT$22.740 |
| 1000+ | NT$20.500 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI9926CDY-T1-GE3复制
製造商標準前置時間56 週
訂購代碼
複捲式2454811RL
條帶式包裝2454811
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.015ohm
Drain Source On State Resistance P Channel0.015ohm
Transistor Case StyleNSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
0.015ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.015ohm
Transistor Case Style
NSOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000141