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SIDR870ADP-T1-GE3
Power MOSFET, N Channel, 100 V, 95 A, 6600 µohm, PowerPAK SO, Surface Mount
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製造商VISHAY
製造商產品編號SIDR870ADP-T1-GE3复制
製造商標準前置時間56 週
訂購代碼
複捲式2846628RL
條帶式包裝2846628
Product RangeTrenchFET Series
您的零件号
32,092 有存貨
需要更多？
32,092 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$63.930 | NT$319.65 |
| 總計 價格 | NT$319.65 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$63.930 |
| 50+ | NT$54.000 |
| 100+ | NT$44.060 |
| 500+ | NT$33.790 |
| 1500+ | NT$33.120 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIDR870ADP-T1-GE3复制
製造商標準前置時間56 週
訂購代碼
複捲式2846628RL
條帶式包裝2846628
Product RangeTrenchFET Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id95A
Drain Source On State Resistance6600µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCLead (04-Feb-2026)
產品總覽
SIDR870ADP-T1-GE3 is a N-channel (D-S) MOSFET. Application includes synchronous rectification, primary side switch, DC/DC converters, OR-ing, power supplies, motor drive control, battery and load switch.
- TrenchFET® power MOSFET
- Top side cooling feature provides additional venue for thermal transfer
- 100% Rg and UIS tested
- Drain-source breakdown voltage is 100V (min, VGS = 0V, ID = 250μA, TJ = 25°C)
- VDS temperature coefficient is 56mV/°C (typ, ID = 250μA, TJ = 25°C)
- Gate-source threshold voltage range from 1.5 to 3V (VDS = VGS, ID = 250μA)
- Zero gate voltage drain current is 1μA (min, VDS = 100V, VGS = 0V)
- Forward transconductance is 68S (typ, VDS = 10V, ID = 20A, TJ = 25°C)
- Output capacitance is 719pF (typ, VDS = 50V, VGS = 0V, f = 1MHz)
- PowerPAK SO-8DC package, operating junction and storage temperature range from -55 to +150°C
技術規格
Channel Type
N Channel
Continuous Drain Current Id
95A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6600µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
SIDR870ADP-T1-GE3 的替代選擇
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000074