列印頁面
SIHA12N60E-E3
Power MOSFET, N Channel, 600 V, 12 A, 0.38 ohm, TO-220F, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
734 有存貨
需要更多？
734 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$112.200 |
| 10+ | NT$56.270 |
| 25+ | NT$53.790 |
| 50+ | NT$51.310 |
| 100+ | NT$48.830 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$112.20
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIHA12N60E-E3复制
製造商標準前置時間42 週
訂購代碼2422227
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id12A
Drain Source On State Resistance0.38ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation33W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
產品總覽
The SIHA12N60E-E3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, PFC power supplies, adaptors, TV, game console and ATX power supply applications.
- Low figure-of-merit(FOM) RON x Qg
- Low input capacitance (CISS)
- Reduced switching and conduction losses
- Ultra low gate charge
- Avalanche energy rated
應用
Industrial, Power Management, Communications & Networking, Lighting, Consumer Electronics, Computers & Computer Peripherals
技術規格
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
33W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.38ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
SIHA12N60E-E3 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0004