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可供訂購
製造商標準交貨時間：32 週
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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$91.520 | NT$91.52 |
| 總計 價格 | NT$91.52 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$91.520 |
| 10+ | NT$59.110 |
| 100+ | NT$40.530 |
| 500+ | NT$32.330 |
| 1000+ | NT$29.520 |
| 5000+ | NT$28.410 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIHD12N50E-GE3复制
製造商標準前置時間32 週
訂購代碼
複捲式2471940RL
條帶式包裝2471940
Product RangeE
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id10.5A
Drain Source On State Resistance0.33ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation114W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (04-Feb-2026)
產品總覽
The SIHD12N50E-GE3 is an E series N-channel enhancement-mode Power MOSFET suitable for computing, lighting, consumer electronics, switch mode power supplies and hard switched topology applications.
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (CISS)
- Reduced switching
- Reduced conduction losses
- Low gate charge (Qg)
- Avalanche energy rated (UIS)
- Halogen-free
應用
Industrial, Power Management, LED Lighting, Consumer Electronics, Portable Devices
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
10.5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
114W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.33ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002117