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SIHG20N50C-E3
Power MOSFET, N Channel, 500 V, 20 A, 0.27 ohm, TO-247, Through Hole
不再生產
產品訊息
製造商VISHAY
製造商產品編號SIHG20N50C-E3复制
訂購代碼1779257
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id20A
Drain Source On State Resistance0.27ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation292W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
SIHG20N50C-E3 的替代選擇
找到 6 個產品
產品總覽
The SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipation and high peak current capability.
- Halogen-free according to IEC 61249-2-21 definition
- Low figure of merit Ron X Qg
- 100% Avalanche rated
- dV/dt Ruggedness
- Improved Trr/Qrr
- Improved gate charge
應用
Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
292W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00542