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SIR5102DP-T1-RE3
Power MOSFET, N Channel, 100 V, 110 A, 0.0034 ohm, PowerPAK SO, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SIR5102DP-T1-RE3
訂購代碼3773157
Product RangeTrenchFET Gen V
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id110A
Drain Source On State Resistance0.0034ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
110A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0034ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
TrenchFET Gen V
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001