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產品訊息
製造商VISHAY
製造商產品編號SIR5607DP-T1-RE3
訂購代碼4241529
Product RangeTrenchFET Gen V Series
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id90.9A
Drain Source On State Resistance0.007ohm
Transistor Case StylePowerPAK SO-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V Series
Qualification-
SVHCLead (21-Jan-2025)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
90.9A
Transistor Case Style
PowerPAK SO-8S
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.007ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
8Pins
Product Range
TrenchFET Gen V Series
SVHC
Lead (21-Jan-2025)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000074