列印頁面
SIRS4401DP-T1-GE3
Power MOSFET, P Channel, 40 V, 198 A, 0.0022 ohm, PowerPAK SO, Surface Mount
產品訊息
製造商VISHAY
製造商產品編號SIRS4401DP-T1-GE3
訂購代碼4199568
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id198A
Drain Source On State Resistance0.0022ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation132W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
198A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
132W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0022ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
8Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000074