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SIRS5100DP-T1-GE3
Power MOSFET, N Channel, 100 V, 225 A, 0.002 ohm, PowerPAK SO-8S, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SIRS5100DP-T1-GE3
訂購代碼4205151
Product RangeTrenchFET Gen V Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id225A
Drain Source On State Resistance0.002ohm
Transistor Case StylePowerPAK SO-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation240W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V Series
Qualification-
SVHCLead (21-Jan-2025)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
225A
Transistor Case Style
PowerPAK SO-8S
Rds(on) Test Voltage
10V
Power Dissipation
240W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.002ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
TrenchFET Gen V Series
SVHC
Lead (21-Jan-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000074