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SIS176LDN-T1-GE3
Power MOSFET, N Channel, 70 V, 42.3 A, 0.0109 ohm, PowerPAK 1212, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SIS176LDN-T1-GE3
訂購代碼3677854
Product RangeTrenchFET Gen IV
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds70V
Continuous Drain Current Id42.3A
Drain Source On State Resistance0.0109ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.6V
Power Dissipation39W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
產品總覽
N-channel 70V (D-S) MOSFET in PowerPAK 1212-8 package is typically used in synchronous rectification, primary side switch, DC/DC converter, motor drive control and load switch applications.
- TrenchFET® Gen IV power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100% Rg and UIS tested
技術規格
Channel Type
N Channel
Continuous Drain Current Id
42.3A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
70V
Drain Source On State Resistance
0.0109ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005