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SIS443DN-T1-GE3
Power MOSFET, P Channel, 40 V, 35 A, 0.0117 ohm, PowerPAK 1212, Surface Mount
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1,946 有存貨
24,000 即日起您可預購補貨
1,946 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$97.020 |
| 10+ | NT$61.700 |
| 100+ | NT$42.220 |
| 500+ | NT$34.950 |
| 1000+ | NT$28.140 |
| 5000+ | NT$27.580 |
價格Each
最少: 1
多項: 1
NT$97.02
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIS443DN-T1-GE3复制
製造商標準前置時間56 週
訂購代碼2364099
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id35A
Drain Source On State Resistance0.0117ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
產品總覽
The SIS443DN-T1-GE3 is a -40V P-channel TrenchFET® Power MOSFET. Suitable for use in notebook battery charging, DC/DC converter and adapter switch applications. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
應用
Power Management, Consumer Electronics, Computers & Computer Peripherals
技術規格
Channel Type
P Channel
Continuous Drain Current Id
35A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0117ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000072