列印頁面
SIS932EDN-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 6 A, 6 A, 0.018 ohm
產品訊息
製造商VISHAY
製造商產品編號SIS932EDN-T1-GE3
訂購代碼2846633
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Drain Source On State Resistance N Channel0.018ohm
Drain Source On State Resistance P Channel0.018ohm
Transistor Case StylePowerPAK 1212
No. of Pins6Pins
Power Dissipation N Channel23W
Power Dissipation P Channel23W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHC0
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance P Channel
0.018ohm
No. of Pins
6Pins
Power Dissipation P Channel
23W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.018ohm
Transistor Case Style
PowerPAK 1212
Power Dissipation N Channel
23W
Operating Temperature Max
150°C
Qualification
-
SVHC
0
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:0
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000074