列印頁面
SISF54DN-T1-GE3
Dual MOSFET, N Channel, 30 V, 118 A, 0.0031 ohm
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產品訊息
製造商VISHAY
製造商產品編號SISF54DN-T1-GE3
訂購代碼4572106
Product RangeTrenchFET Gen V Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel118A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.0031ohm
Drain Source On State Resistance P Channel-
Transistor Case StylePowerPAK 1212-SCD
No. of Pins8Pins
Power Dissipation N Channel69.4W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeTrenchFET Gen V Series
Qualification-
SVHCLead (07-Nov-2024)
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
TrenchFET Gen V Series
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
118A
Drain Source On State Resistance N Channel
0.0031ohm
Transistor Case Style
PowerPAK 1212-SCD
Power Dissipation N Channel
69.4W
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001