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SIZ342ADT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 33.4 A, 33.4 A, 7800 µohm
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| 數量 | 價格 |
|---|---|
| 1+ | NT$44.920 |
| 10+ | NT$28.240 |
| 100+ | NT$18.620 |
| 500+ | NT$14.490 |
| 1000+ | NT$12.640 |
| 5000+ | NT$11.240 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$44.92
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIZ342ADT-T1-GE3复制
製造商標準前置時間27 週
訂購代碼3365523
Product RangeTrenchFET GEN IV Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel33.4A
Continuous Drain Current Id P Channel33.4A
Drain Source On State Resistance N Channel7800µohm
Drain Source On State Resistance P Channel7800µohm
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation N Channel16.7W
Power Dissipation P Channel16.7W
Operating Temperature Max150°C
Product RangeTrenchFET GEN IV Series
Qualification-
SVHCTo Be Advised
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
33.4A
Drain Source On State Resistance P Channel
7800µohm
No. of Pins
8Pins
Power Dissipation P Channel
16.7W
Product Range
TrenchFET GEN IV Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
33.4A
Drain Source On State Resistance N Channel
7800µohm
Transistor Case Style
PowerPAIR
Power Dissipation N Channel
16.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001