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SQ9945BEY-T1_GE3
Dual MOSFET, N Channel, 60 V, 60 V, 6 A, 6 A, 0.045 ohm
不再生產
產品訊息
製造商VISHAY
製造商產品編號SQ9945BEY-T1_GE3复制
訂購代碼3470710
Product RangeTrenchFET Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Drain Source On State Resistance N Channel0.045ohm
Drain Source On State Resistance P Channel0.045ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel4W
Power Dissipation P Channel4W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
SQ9945BEY-T1_GE3 的替代選擇
找到 1 個產品
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance P Channel
0.045ohm
No. of Pins
8Pins
Power Dissipation P Channel
4W
Product Range
TrenchFET Series
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.045ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
4W
Operating Temperature Max
175°C
Qualification
AEC-Q101
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.000907