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SQJ951EP-T1_NE3
Dual MOSFET, Dual N Channel, 30 V, 30 A, 0.017 ohm
可供訂購
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| 數量 | 價格 |
|---|---|
| 5+ | NT$59.210 |
| 50+ | NT$45.070 |
| 250+ | NT$34.470 |
| 500+ | NT$32.700 |
| 1500+ | NT$32.260 |
| 3000+ | NT$30.490 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$296.05
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SQJ951EP-T1_NE3复制
訂購代碼5133080
Product RangeTrenchFET Series
技術資料表
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.017ohm
Drain Source On State Resistance P Channel-
Transistor Case StylePowerPAK SO
No. of Pins4Pins
Power Dissipation N Channel56W
Power Dissipation P Channel-
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCNo SVHC (04-Feb-2026)
技術規格
Channel Type
Dual N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
4Pins
Power Dissipation P Channel
-
Product Range
TrenchFET Series
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
30A
Drain Source On State Resistance N Channel
0.017ohm
Transistor Case Style
PowerPAK SO
Power Dissipation N Channel
56W
Operating Temperature Max
175°C
Qualification
AEC-Q101
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Great Britain
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Great Britain
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001