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SQJB68EP-T1_GE3
Dual MOSFET, N Channel, 100 V, 100 V, 11 A, 11 A, 0.0765 ohm
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產品訊息
製造商VISHAY
製造商產品編號SQJB68EP-T1_GE3
訂購代碼2932990RL
Product RangeTrenchFET Series
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Continuous Drain Current Id11A
Drain Source Voltage Vds P Channel100V
On Resistance Rds(on)0.0765ohm
Continuous Drain Current Id N Channel11A
Continuous Drain Current Id P Channel11A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0765ohm
Drain Source On State Resistance P Channel0.0765ohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max2V
No. of Pins8Pins
Power Dissipation Pd27W
Power Dissipation N Channel27W
Power Dissipation P Channel27W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
11A
On Resistance Rds(on)
0.0765ohm
Continuous Drain Current Id P Channel
11A
Drain Source On State Resistance N Channel
0.0765ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
27W
Power Dissipation P Channel
27W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
11A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0765ohm
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Power Dissipation N Channel
27W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.003