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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$155.670 | NT$155.67 |
| 總計 價格 | NT$155.67 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$155.670 |
| 10+ | NT$102.680 |
| 100+ | NT$72.540 |
| 500+ | NT$62.280 |
| 1000+ | NT$61.040 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SQJQ141EL-T1_GE3复制
製造商標準前置時間4 週
訂購代碼
複捲式3777512RL
條帶式包裝3777512
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id390A
Drain Source On State Resistance2000µohm
Transistor Case StylePowerPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation600W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
產品總覽
SQJQ141EL-T1_GE3 is an automotive P-channel MOSFET.
- AEC-Q101 qualified
- 100% Rg and UIS tested
- Very low thermal resistance
- Drain-source breakdown voltage is -40V min at VGS = 0, ID = 250μA, TC = 25°C
- Gate-source leakage is ±100nA max at VDS = 0V, VGS = ±20V, TC = 25°C
- On-state drain current is -100A min at VDS ≥ -5V, VGS = -10V, TC = 25°C
- Drain-source on-state resistance is 0.002 ohm typ at ID = 8A, VGS = -4.5V,TC = 25°C
- Forward voltage is -0.8V typ at IF = -50A, VGS = 0, TC = 25°C
- PowerPAK 8 x 8L package
- Operating junction and storage temperature range from -55 to +175°C
技術規格
Channel Type
P Channel
Continuous Drain Current Id
390A
Transistor Case Style
PowerPAK
Rds(on) Test Voltage
10V
Power Dissipation
600W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
2000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000001

