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SQJQ904E-T1_GE3
Dual MOSFET, N Channel, 40 V, 40 V, 100 A, 100 A, 3400 µohm
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1182 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$129.900 |
| 10+ | NT$86.820 |
| 100+ | NT$61.180 |
| 500+ | NT$54.930 |
| 1000+ | NT$53.840 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$129.90
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SQJQ904E-T1_GE3
訂購代碼2663703
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel100A
Continuous Drain Current Id P Channel100A
Drain Source On State Resistance N Channel3400µohm
Drain Source On State Resistance P Channel3400µohm
Transistor Case StylePowerPAK
No. of Pins6Pins
Power Dissipation N Channel135W
Power Dissipation P Channel135W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
100A
Drain Source On State Resistance P Channel
3400µohm
No. of Pins
6Pins
Power Dissipation P Channel
135W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
100A
Drain Source On State Resistance N Channel
3400µohm
Transistor Case Style
PowerPAK
Power Dissipation N Channel
135W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002