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TP0610K-T1-E3
Power MOSFET, P Channel, 60 V, 185 mA, 6 ohm, SOT-23, Surface Mount
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不再生產
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產品訊息
製造商VISHAY
製造商產品編號TP0610K-T1-E3复制
訂購代碼
複捲式2396091RL
條帶式包裝2396091
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id185mA
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
TP0610K-T1-E3 的替代選擇
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產品總覽
The TP0610K-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers.
- Low ON-resistance
- High-side switching
- Low threshold
- 20ns Fast switching speed
- 20pF low input capacitance
- 2000V ESD protection
應用
Industrial, Power Management, Portable Devices
技術規格
Channel Type
P Channel
Continuous Drain Current Id
185mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000185