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9,154 有存貨
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9,154 件可于 3-4 個工作日後配送(英國 件庫存)
存貨供應完畢便停止銷售
| 數量 | 價格 |
|---|---|
| 1+ | NT$54.720 |
| 10+ | NT$36.820 |
| 25+ | NT$34.180 |
| 50+ | NT$31.540 |
| 100+ | NT$28.890 |
| 500+ | NT$26.180 |
價格Each
最少: 1
多項: 1
NT$54.72
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號TSFF5210-CS12复制
製造商標準前置時間19 週
訂購代碼2251305
技術資料表
Peak Wavelength870nm
Angle of Half Intensity10°
Diode Case StyleT-1 3/4 (5mm)
Radiant Intensity (Ie)180mW/Sr
Rise Time15ns
Fall Time tf15ns
Forward Current If(AV)100mA
Forward Voltage VF Max-
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
產品總覽
870nm, GaAlAs double hetero high speed infrared emitting diode. It is suitable for use in Infrared video data transmission between camcorder and TV set, free air data transmission systems with high modulation frequencies or high data transmission rate requirements and smoke-automatic fire detectors.
- Package form: T-1 3/4
- Leads with stand-off
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: = ± 10°
- Low forward voltage
- Suitable for high pulse current operation
- High modulation bandwidth: fc = 24MHz
- Good spectral matching with Si photodetectors
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Peak Wavelength
870nm
Diode Case Style
T-1 3/4 (5mm)
Rise Time
15ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
10°
Radiant Intensity (Ie)
180mW/Sr
Fall Time tf
15ns
Forward Voltage VF Max
-
Operating Temperature Max
85°C
Product Range
-
相關產品
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤):.00035
