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TSHG5510
Infrared Emitter, High Speed, 830 nm, 38 °, T-1 3/4 (5mm), 15 mW/Sr, 15 ns, 15 ns
可供訂購
製造商標準交貨時間：28 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$33.380 |
| 10+ | NT$23.070 |
| 25+ | NT$20.530 |
| 50+ | NT$18.270 |
| 100+ | NT$16.480 |
| 500+ | NT$14.180 |
價格Each
最少: 1
多項: 1
NT$33.38
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號TSHG5510复制
製造商標準前置時間28 週
訂購代碼1779675
技術資料表
Peak Wavelength830nm
Angle of Half Intensity38°
Diode Case StyleT-1 3/4 (5mm)
Radiant Intensity (Ie)15mW/Sr
Rise Time15ns
Fall Time tf15ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.45V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCTo Be Advised
產品總覽
The TSHG5510 is a 830nm high speed Infrared Emitting Diode in GaAlAs double hetero (DH) technology with high radiant power, high speed and moulded in a clear. This diode is suitable for high pulse current operation. It is suitable for use in infrared radiation source for operation with CMOS cameras (illumination), high speed IR data transmission.
- High reliability
- High radiant intensity
- ±38° Angle of half sensitivity
- Low forward voltage
- Good spectral matching with Si photo-detectors
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Peak Wavelength
830nm
Diode Case Style
T-1 3/4 (5mm)
Rise Time
15ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
38°
Radiant Intensity (Ie)
15mW/Sr
Fall Time tf
15ns
Forward Voltage VF Max
1.45V
Operating Temperature Max
85°C
Product Range
-
SVHC
To Be Advised
TSHG5510 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85414100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
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產品合規憑證
重量 (公斤)：.000454