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VS-FC420SA10
MOSFET Transistor, N Channel, 435 A, 100 V, 0.0013 ohm, 10 V, 2.9 V, SOT-227
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970 有存貨
320 即日起您可預購補貨
970 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$890.590 |
| 5+ | NT$840.400 |
| 10+ | NT$790.200 |
| 50+ | NT$740.000 |
| 100+ | NT$721.150 |
價格Each
最少: 1
多項: 1
NT$890.59
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號VS-FC420SA10复制
製造商標準前置時間20 週
訂購代碼3513307
Product RangeTrenchFET Series
技術資料表
Channel TypeN Channel
Continuous Drain Current Id435A
Drain Source Voltage Vds100V
Drain Source On State Resistance2150µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation652W
Operating Temperature Max175°C
Product RangeTrenchFET Series
SVHCTo Be Advised
產品總覽
VS-FC420SA10 is a power module single switch power MOSFET.
- ID <gt/> 420A, TC = 25°C, TrenchFET® power MOSFET
- Low input capacitance (Ciss), reduced switching and conduction losses
- Ultra low gate charge (Qg), avalanche energy rated (UIS)
- UL approved file E78996
- Drain to source voltage is 100V max (TC = 25°C)
- Static drain to source on-resistance is 1.3mohm typ (VGS = 10V, ID = 200A, TJ = 25°C)
- Continuous drain current, VGS at 10V is 435A max (TC = 25°C)
- Insulation voltage (RMS) is 2500V max (any terminal to case, t = 1 min, TC = 25°C)
- Rise time is 275ns typ (VDD = 50V, TJ = 25°C), fall time is 172ns typ (VDD = 50V, TJ = 25°C)
- SOT-227 package, operating junction temperature range from -55 to +175°C
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
100V
Rds(on) Test Voltage
10V
Power Dissipation
652W
Product Range
TrenchFET Series
Continuous Drain Current Id
435A
Drain Source On State Resistance
2150µohm
Gate Source Threshold Voltage Max
3.8V
Operating Temperature Max
175°C
SVHC
To Be Advised
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
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產品合規憑證
重量 (公斤)：.04