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VSLY5850
Infrared Emitter, High Speed, 850 nm, 3 °, T-1 3/4 (5mm), 10 mW/Sr, 10 ns, 10 ns
3,808 有存貨
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3,808 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$43.570 |
| 10+ | NT$31.310 |
| 25+ | NT$29.500 |
| 50+ | NT$27.690 |
| 100+ | NT$25.880 |
| 500+ | NT$23.010 |
價格Each
最少: 1
多項: 1
NT$43.57
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號VSLY5850复制
製造商標準前置時間10 週
訂購代碼1870807
技術資料表
Peak Wavelength850nm
Angle of Half Intensity3°
Diode Case StyleT-1 3/4 (5mm)
Radiant Intensity (Ie)10mW/Sr
Rise Time10ns
Fall Time tf10ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.9V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (07-Nov-2024)
產品總覽
The VSLY5850 is a 850nm Infrared Emitting Diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed and moulded in a clear. It is suitable for use in infrared radiation source for operation with CMOS cameras, high speed IR data transmission, smoke-automatic fire detectors and IR flash.
- Leads with stand-off
- High reliability
- High radiant power
- High radiant intensity
- ±3° Narrow angle of half intensity
技術規格
Peak Wavelength
850nm
Diode Case Style
T-1 3/4 (5mm)
Rise Time
10ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
3°
Radiant Intensity (Ie)
10mW/Sr
Fall Time tf
10ns
Forward Voltage VF Max
1.9V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
關稅編號：85414100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (07-Nov-2024)
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重量 (公斤)：.000454