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可供訂購
製造商標準交貨時間:14 週
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| 數量 | 價格 |
|---|---|
| 1+ | NT$160.060 |
| 10+ | NT$117.390 |
| 25+ | NT$109.310 |
| 50+ | NT$101.220 |
| 100+ | NT$93.130 |
| 500+ | NT$82.460 |
價格Each
最少: 1
多項: 1
NT$160.06
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號VSMY98545复制
製造商標準前置時間14 週
訂購代碼2424452
技術資料表
Peak Wavelength850nm
Angle of Half Intensity45°
Diode Case StyleSMD
Radiant Intensity (Ie)15mW/Sr
Rise Time15ns
Fall Time tf18ns
Forward Current If(AV)1A
Forward Voltage VF Max2.3V
Operating Temperature Min-40°C
Operating Temperature Max95°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (07-Nov-2024)
產品總覽
The VSMY98545 is a 850nm Infrared Emitting Diode based on surface emitter technology with high radiant power and high speed. A 42mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1A. It has the floor life of 168h, MSL 3, according to J-STD-020. It is suitable for use in infrared illumination for CMOS cameras (CCTV), illumination for cameras (3D gaming) and machine vision and bio identification.
- High reliability
- High radiant power
- High radiant intensity
- Low forward voltage
- Lead (Pb)-free reflow soldering
- ±45° Angle of half intensity
技術規格
Peak Wavelength
850nm
Diode Case Style
SMD
Rise Time
15ns
Forward Current If(AV)
1A
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
45°
Radiant Intensity (Ie)
15mW/Sr
Fall Time tf
18ns
Forward Voltage VF Max
2.3V
Operating Temperature Max
95°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85414100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.001361

