列印頁面
C2M0160120D
Silicon Carbide MOSFET, Single, N Channel, 19 A, 1.2 kV, 0.16 ohm, TO-247
圖片僅供舉例說明。 請參閱產品描述。
不再生產
產品訊息
製造商WOLFSPEED
製造商產品編號C2M0160120D复制
訂購代碼2630830
Product RangeC2M
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id19A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.16ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.6V
Power Dissipation125W
Operating Temperature Max150°C
Product RangeC2M
MSL-
SVHCNo SVHC (17-Dec-2015)
C2M0160120D 的替代選擇
找到 4 個產品
產品總覽
The C2M0160120D is a 1.2kV N-channel enhancement mode silicon carbide Power MOSFET of high speed switching with low capacitances. The Z-FET™ MOSFET is ideal for high-frequency applications. The silicon carbide power MOSFET features higher system efficiency, reduced cooling requirements and increased system switching frequency.
- High blocking voltage with low RDS (on)
- Easy to parallel and simple to drive
- Resistant to latch-up
- Halogen-free
應用
Power Management, Alternative Energy
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
19A
Drain Source On State Resistance
0.16ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
2.6V
Operating Temperature Max
150°C
MSL
-
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
20V
Power Dissipation
125W
Product Range
C2M
SVHC
No SVHC (17-Dec-2015)
相關產品
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Dec-2015)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.008301